| 1. | Thin copper films prepared by chemical vapor deposition on glass - ceramic substrates
玻璃陶瓷基板上铜薄膜的化学气相沉积 |
| 2. | The design of manganin film and copper film were etched by the first time
首次采用以半导体光刻的方法来刻蚀锰铜敏感薄膜和铜电极薄膜的图形。 |
| 3. | It ' s the first time to deposit copper film on surface of al mmcs by magnetron sputtering , and embed al mmcs into the sputtering region of al target
本文首次提出使用磁控溅射法制备瞬间液相连接的中间层。一种是直接沉积法，另一种是溅射去除氧化膜再沉积法。 |
| 4. | Inlaid target sputtering to remove oxide scale on surface of al mmcs at first , then another copper target sputtering , copper film was deposited on the inlaid target
研究了磁控溅射法在待连接表面沉积中间层的工艺参数以及不同的中间层制备方法对tlp连接接头组织和性能的影响。 |
| 5. | Xrd analysis results reveal the electroplated copper film has strong cu { 111 } texture and cu { 111 } texture weakens after annealed . the cu { 111 } texture of copper film in trenches is obviously weaker than that of the blanket copper film
在沉积态铜膜存在较强的铜{ 111 }织构，热处理以后铜膜的织构减弱，铜互连线沟槽中铜{ 111 }织构要弱于铜膜的铜{ 111 }织构。 |
| 6. | In this paper , the effects of process parameter of brush copperplating on the copper film for prevention of carburization were studied ; the relation between the time of carburization and the minimun thickness of copper film for prevention of carburization was established
研究了用刷镀镀铜防渗碳时的工艺参数对镀层防渗碳效果的影响，及渗碳时间与防渗碳所需的最小镀层厚度之间的关系。 |
